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MS1226
Silicon NPN Transistor
Final RF Power Output

The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.

Application:

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 65V
Collector-Base Voltage, VCBO 36V
Emitter-Base Voltage, VEBO 4,0V
Collector Current, IC 4,5A
Collector Power Dissipation (TC = +50°C), PD 80W
Operating Junction Temperature, TJ +200°C
Storage Temperature Range, Tstg -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 2,2°C/W


Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 200mA, IE = 0 65 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200mA, RBE = 0 65 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 1 mA
DC Forward Current Gain hFE VCE = 5V, IC = 500mA 10 - 200  
Power Output PO VCC = 28V, Pin = 0,48W, f = 30MHz 30 - - W
Power Gain GP VCC = 28V, Pin = 0,48W, f = 30MHz 18 - - dB


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